X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤100 nm) using a low temperature growth step

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Output type: Journal article

UM6P affiliated Publication?: No

Author list: Ni W., Lyutovich K., Alami J., Tengstedt C., Bauer M., Kasper E.

Editor list: Kong M.; Tu C.W.

Publisher: Elsevier

Publication year: 2001

Journal: Journal of Crystal Growth (0022-0248)

Volume number: 227

Start page: 756

End page: 760

Number of pages: 5

ISSN: 0022-0248

URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0035398917&origin=inward

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Relaxation of thin SiGe layers (∼90 nm) grown by molecular beam epitaxy using a low temperature growth step (120-200°C) has been investigated using two-dimensional reciprocal space mapping of X-ray diffraction. The samples studied have been divided in two groups, depending on the substrate cooling process during the growth of the low temperature layer. It has been found that a higher degree of relaxation was easily achieved for the sample group without growth interruption. A process window for full relaxation of the Si0.74Ge0.26 layer has been observed in the range of 140-150°C. © 2001 Elsevier Science B.V.


A1. X-ray diffraction, A3. Molecular beam epitaxy


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Last updated on 2021-22-11 at 23:16